STP15810 - STMicroelectronics

STP15810 N-channel MOSFET

This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * 6 $0Y Order code STP15810 Table 1. Device summary Marking Package 15810 TO-220 Packaging Tub.

Features

TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% Order code STP15810 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W
• 100% avalanche tested
• Ultra low on-resistance Applications
• Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
* 6 $0Y Order code STP15810 Table 1. Device summary Marking Package 15810 TO-220 Packaging Tub.