STP15N05LFI - STMicroelectronics

STP15N05LFI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP15N05L STP15N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP15N05L STP15N05LFI s s s s s s s s V DSS 50 V 50 V R DS( on) < 0.15 Ω < 0.15 Ω ID 15 A 10 A TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE .

Features

on at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP15N05LFI 50 50 ± 15 15 10 60 70 0.47  -65 to 175 175 10 7 60 35 0.23 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area November 1996 1/10 Free Datasheet http://www.datasheet4u.com/ STP15N05L/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 ISOWATT220 4.29 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Ty.