STP150N3LLH6 - STMicroelectronics

STP150N3LLH6 N-channel MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 3 !-V Table 1. Device summary Marking 150N3LLH6 150N3LLH6 150N3LLH6 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube Order codes STD1.

Features

Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6
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■ VDSS 30 V 30 V 30 V RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω ID 80 A 80 A 80 A 3 1 3 2 1 DPAK IPAK RDS(on)
* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 1 2 3 TO-220 Application
■ Switching applications Figure 1. Internal schematic diagram $4!"OR Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' .