STP150N10F7AG - STMicroelectronics

STP150N10F7AG Automotive N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STP150N10F7AG Product summary Order code STP150N10F7AG Marking 150N10F7AG Package TO-220 .

Features

TAB Order code VDS RDS(on) max. ID STP150N10F7AG 100 V 4.2 mΩ 110 A TO-220 1 23 D(2, TAB)
• Designed for automotive application
• Standard level VGS(TH)
• 175°C junction temperature
• 100% avalanche rated Applications
• Switching applications G(1) S(3) AM01475v1_noZen Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STP150N10F7AG Product summary Order c.