This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order code STP110N7F6 $0Y Table 1. Device summary Marking Package 110N7F6 TO-220 Packing Tube October 2016 This is information on a product in full pro.
Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W
3 2 1
TO-220
Figure 1. Internal schematic diagram
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• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6
Order code STP110N7F6
$0Y
Table 1. Device summary
Marking
Package
110N7F6
TO-220
Packing Tube
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP110N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP110N10F7 |
INCHANGE |
N-Channel MOSFET | |
3 | STP110N55F6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP110N8F6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STP110N8F6 |
INCHANGE |
N-Channel MOSFET | |
6 | STP110N8F7 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STP110N8F7 |
INCHANGE |
N-Channel MOSFET | |
8 | STP1117S12 |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator | |
9 | STP1117S18 |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator | |
10 | STP1117S25 |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator | |
11 | STP1117S33 |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator | |
12 | STP1117SA |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator |