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This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. * 6 $0Y Order code STP110N55F6 Table 1. Device summary Marking Packages 110N55F6 TO-220 Packaging Tube July 2014 This is information on a product.
TAB
3 2 1
TO-220
Order code STP110N55F6
VDS 55 V
RDS(on) max. ID 5.2 mΩ 110 A
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
Applications
• Switching applications
Figure 1. Internal schematic diagram
' 7$%
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages.
*
6
$0Y
Order code STP110N55F6
Table 1. Device summary
Marking
Packages
110N55F6
TO-220
Packaging Tube
July 2014
This is informatio.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP110N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STP110N10F7 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STP110N7F6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STP110N8F6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STP110N8F6 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STP110N8F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | STP110N8F7 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | STP1117S12 |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator |
|
| 9 | STP1117S18 |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator |
|
| 10 | STP1117S25 |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator |
|
| 11 | STP1117S33 |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator |
|
| 12 | STP1117SA |
SeCoS |
1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator |
|