STP110N8F7 - STMicroelectronics

STP110N8F7 N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STP110N8F7 Table 1: Device summary Marking Package 110N8F7 TO-220 Packaging Tube November 2015 Do.

Features

Order code STP110N8F7 VDS 80 V RDS(on)max 7.5 mΩ ID 80 A PTOT 170 W
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STP110N8F7 Table 1: Device summary Marking Package 110N8F7 TO-220 Packagi.