STN4536 - Stanson Technology

STN4536 MOSFET

STN4536 is Due N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where h.

Features

d ) Parameter Symbol Typical Drain-Source Voltage VDSS 40 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM ±20 10.0 8.0 30 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ 2.3 2.5 1.6 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN45326 2007. V1 3 STN4536 Due N Ch.