STN4130 |
Part Number | STN4130 |
Manufacturer | Stanson Technology |
Description | STN4130 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies... |
Features |
t
TA=25℃ TA=70℃
VGSS ID
IDM
±20
20.0 10.0
34
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
36
42 25
155
Storgae Temperature Range
TSTG
-55/155
Thermal Resistance-Junction to Ambient
RθJA
13
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN4130 2009. V1
STN4130
N Channel Enhancement Mode MOSFET
20.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static Drain-Source Breakdown Voltage... |
Document |
STN4130 Data Sheet
PDF 1.14MB |
Distributor | Stock | Price | Buy |
---|