STN2NF10 - ST Microelectronics

STN2NF10 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC-DC & DC-AC COVERTERS s .

Features

e Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 2 1.26 8 2.5 0.02 300 -65 to 150 150 (1) ISD ≤1A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX Unit V V V A A A W W/°C mJ °C °C (
•
•) Pulse width limited by safe operating area. (
•) Current limited by the package December 2001 . 1/8 STN2NF10 THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB (1 inch2 copper board) Thermal Resistance Junction-PCB (min. footprint) Maximum Lead Temperature For Soldering Purpose 50 90 260 °C/W °C/W °C Typ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unle.