STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power management and other battery powered circ.
oltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 20 ±12 10.0 8.0 35 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp . STN2018 2013. V1 STN2018 N Channel Enhancement Mode MOSFET 10.0A ELECTRI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN210D |
STANSON |
N-Channel Enhancement Mode MOSFET | |
2 | STN2120 |
OBD Solutions |
Multiprotocol OBD to UART Interpreter | |
3 | STN2222 |
AUK |
NPN Silicon Transistor | |
4 | STN2222A |
AUK |
NPN Silicon Transistor | |
5 | STN2222AS |
AUK |
NPN Silicon Transistor | |
6 | STN2222ASF |
AUK |
NPN Silicon Transistor | |
7 | STN2300 |
Semtron |
N-Channel Enhancement Mode MOSFET | |
8 | STN2300A |
Semtron |
N-Channel Enhancement Mode MOSFET | |
9 | STN2302 |
Semtron |
N-Channel Enhancement Mode MOSFET | |
10 | STN2306 |
Semtron |
N-Channel Enhancement Mode MOSFET | |
11 | STN2342 |
Semtron |
N-Channel Enhancement Mode MOSFET | |
12 | STN2342A |
Semtron |
N-Channel Enhancement Mode MOSFET |