STN2NF06L - ST Microelectronics

STN2NF06L N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK D.

Features

n Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 16 2 1.2 8 3 8 6 200 -55 to 150 Unit V V V A A A W W/°C V/ns mJ °C °C (
•) Pulse width limited by safe operating area. (1) Related to Rthj -l (2) ISD ≤ 2A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX (3) Starting T j = 25 oC, ID = 2A, VDD = 30V November 2002 . 1/8 STN2NF06L THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB(1 inch2 copper.