STN2NF06 - ST Microelectronics

STN2NF06 N-CHANNEL POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ ” stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. www.DataSheet4U.com 1 SOT-223 2 AP.

Features

ontinuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature o o o Value 60 60 ± 20 2 1.8 8 2.5 0.02 6 -65 to 150 150 (1) ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C (
•) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 July 1998 1/9 STN2NF06 THERMAL DATA R thj -pcb R t hj- amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistanc.