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This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC-DC CONVERTERS s DC MO.
Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 1 0.6 4 2.5 0.02 20 35 -55 to 150
(1) ISD ≤ 1A, di/dt ≤ 350A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (2) Starting T j = 25 oC, ID = 1A, VDD = 70V
Unit V V V A A A W W/°C V/ns mJ °C
(
•) Pulse width limited by safe operating area. October 2001
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STN1NF10
THERMAL DATA
Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB(1 inch2 copper board) Thermal Resistance Junction-PCB (min. footprint) Maximum Lead Temperature For Soldering Purpose 50 90 260 °C/W °C/W °C
ELECTRICA.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STN1NF20 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STN1N20 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 3 | STN1NB80 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 4 | STN1NC60 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 5 | STN1NK60Z |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 6 | STN1NK80Z |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | STN101050BL25 |
EATON |
TVS Diode ESD suppressor |
|
| 8 | STN1012 |
Stanson Technology |
MOSFET |
|
| 9 | STN1100 |
ScanToo |
Multiprotocol OBD-II to UART Interpreter |
|
| 10 | STN1110 |
OBD Solutions |
Multiprotocol OBD to UART Interpreter |
|
| 11 | STN1110-I |
OBD Solutions |
Multiprotocol OBD to UART Interpreter |
|
| 12 | STN1170 |
OBD Solutions |
Multiprotocol OBD to UART Interpreter |
|