STN1NF10 |
Part Number | STN1NF10 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, ... |
Features |
Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 1 0.6 4 2.5 0.02 20 35 -55 to 150
(1) ISD ≤ 1A, di/dt ≤ 350A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (2) Starting T j = 25 oC, ID = 1A, VDD = 70V
Unit V V V A A A W W/°C V/ns mJ °C
( •) Pulse width limited by safe operating area. October 2001 . 1/8 STN1NF10 THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB(1 inch2 copper board) Thermal Resistance Junction-PCB (min. footprint) Maximum Lead Temperature For Soldering Purpose 50 90 260 °C/W °C/W °C ELECTRICA... |
Document |
STN1NF10 Data Sheet
PDF 206.85KB |
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