STN1NB80 - STMicroelectronics

STN1NB80 N-CHANNEL MOSFET

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.

Features

G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) Ts tg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 800 800 ± 30 0.2 0.12 0.8 2.9 0.02 4 -65 to 150 150 ( 1) ISD ≤ 0.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C (
•) Pulse width limited by safe operating area November 1999 STN1NB80 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junc.