STL4N80K5 - STMicroelectronics

STL4N80K5 N-CHANNEL POWER MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STL4N80K5 Table 1. Device summary Marking Package 4N80K.

Features

Order code STL4N80K5 VDS 800 V RDS(on)max. 2.5 Ω
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener protected ID 2.5 A Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v1 Applications
• Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requi.