STL40N10F7 - STMicroelectronics

STL40N10F7 N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL40N10F7 Table 1: Device summary Marking Package 40N10F7 PowerFLATTM 5x6 Packing Tape and reel D.

Features

Order code STL40N10F7 VDS 100 V RDS(on) max. 0.024Ω ID 10 A PTOT 5W
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL40N10F7 Table 1: Device summary Marking Package 40N10F7 PowerFLATTM 5x6.