STL45N10F7AG - STMicroelectronics

STL45N10F7AG Automotive-grade N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL45N10F7AG Table 1: Device summary Marking Package 45N10F7 PowerFLAT™ 5x6 Packing Tape and reel .

Features

Order code VDS RDS(on) max ID PTOT STL45N10F7AG 100 V 24 mΩ 18 A 72 W
 AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
 Wettable flank package Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL45N10F7AG Table 1: Device su.