STL4N10F7 - STMicroelectronics

STL4N10F7 N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Maturity status link STL4N10F7 Device summary Order code STL4N10F7 Marking 4N1F7 Package PowerFLAT™ 3.3x3.3.

Features

Order code VDS STL4N10F7 100 V
• Excellent FoM (figure of merit)
• Low Crss/Ciss ration for EMI immunity
• High avalanche ruggedness RDS(on) max. 70 mΩ ID 4.5 A Applications
• Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Maturity status link STL4N10F7 Device summary Order code STL4N10F7 Marking 4N1F7 Package PowerFLAT™ 3.3x3.3 Packing Tape and .