STL22NF10 - STMicroelectronics

STL22NF10 N-CHANNEL MOSFET

This application specific Power MOSFET is the second generation of STMicroelectronis unique "STripFET™" technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFI.

Features

ontinuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C (Steady State) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 5.3 3.8 22 4 70 0.03 16 82 -55 to 150 Unit V V V A A A W W W/°C V/ns mJ °C 1/8 STL22NF10 THERMAL DATA Rthj-F Rthj-pcb(4) (
*)Thermal Resistance Junction-Foot (Drain) Thermal Operating Junction-pcb 1.8 31.5 °C/W °C/W (
*) Mounted on FR-4 board (t [ 10 sec.) www.datashe.