STL225N6F7AG - STMicroelectronics

STL225N6F7AG N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL225N6F7AG Table 1: Device summary Marking Package 225N6F7 PowerFLATTM 5x6 Packaging Tape and ree.

Features

Order code STL225N6F7AG V DS 60 V RDS(on) max 1.4 mΩ ID 120 A
 AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
 Wettable flank package Applications
 DC-DC converter for H.E.V. (hybrid electric vehicle) Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL225N6F7A.