This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converter.
Order code STL15N60M2-EP
VDS @ TJmax
RDS(on) max.
ID
PTOT
650 V 0.418 Ω 7 A 55 W
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics with .
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