This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. Table 1. Device summary Marking 15.
Type STL150N3LLH6 VDSS 30 V RDS(on) max 0.002 Ω ID 33 A (1)
1. The value is rated according Rthj-pcb
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RDS(on)
* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge
PowerFLAT™ ( 6x5 )
Application
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Switching applications
Figure 1.
Internal schematic diagram
Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitab.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STL150N3LLH5 |
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2 | STL15DN4F5 |
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3 | STL15N3LLH5 |
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4 | STL15N60DM6 |
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5 | STL15N60M2-EP |
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6 | STL15N65M5 |
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7 | STL15S03F |
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8 | STL15S05F |
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9 | STL15S09F |
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11 | STL15S15F |
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