STL10N60M2 - STMicroelectronics

STL10N60M2 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Or.

Features

1 2 3 4 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL10N60M2 VDS @ TJmax 650 V RDS(on) max 0.660 Ω ID 5.5 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the compan.