STL105N4LF7AG - STMicroelectronics

STL105N4LF7AG N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL105N4LF7AG Table 1: Device summary Marking Package 105N4LF7 PowerFLATTM 5x6 Packing Tape and re.

Features

Order code STL105N4LF7AG VDS 40 V RDS(on) max. 4.5 mΩ ID 105 A
 AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
 Wettable flank package Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL105N4LF7AG Table 1: Device summary .