This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL105N8F7AG Product summary Order code STL105N8F7AG Marking 105N8F7 Package PowerFLAT 5x.
4 3 2 1
PowerFLAT 5x6
D(5, 6, 7, 8)
8 76 5
Order code STL105N8F7AG
VDS 80 V
RDS(on) max. 6.5 mΩ
• AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
• Wettable flank package
ID 95 A
G(4)
Applications
• Switching applications
S(1, 2, 3)
12 34 Top View
AM15540v2
Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge f.
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