STHU47N60DM6AG - STMicroelectronics

STHU47N60DM6AG N-channel Power MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-e.

Features

Order code STHU47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A
• AEC-Q101 qualified
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
• Excellent switching performance thanks to the extra driving source pin Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTABZ Applications
• Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared wit.