STHI10N50FI - STMicroelectronics

STHI10N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STHI10N50 STHI10N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY DATA TYPE STHI10N50 STHI10N50FI Voss 500 V 500 V 10 10 A 10 A • HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY • FAST TURN-OFF: tf < 1.5 P.s APPLICATIONS: • MOTOR CONTROL N - channel High Injection POWER MOS transistors (IGBT) which.

Features

perature Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 500 V ±20 V 10 A 30 A STHI10N50 STHI10N50FI 100 35 W 0.8 -65 to 150 150 1/6 633 STHI10N50 - STHI10N50FI THERMAL DATARthj _case Thermal resistance junction-case TO-220 ISOWATT220 max 1_25 3.57 °C/w ELECTRICAL CHARACTERISTICS (Ti = 25°C unless otherwise specified) Parameters Test Conditions OFF ,,(SR) oss Drain-source breakdown voltage 10= 250 p,A VGs= 0 500 loss Zero gate voltage VOS = Max Rating drain current (VGs=O) Vos = Max Rating x 0.8 Ti= 125°C IGSS Gate.