STHI07N50FI - STMicroelectronics

STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY OATA TYPE STHI07N50 STHI07N50FI Voss 500 V 500 V 10 7A 7A • HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY APPLICATIONS: • AUTOMOTIVE IGNITION • DRIVERS FOR SOLENOIDS AND RELAYS N - channel High Injection POWER MOS transistors (lGBT.

Features

a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relays. TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM 0 s ABSOLUTE MAXIMUM RATINGS Vos Drain-source voltage (VGS =0) VGS Gate-source voltage 10 (-) Drain current (contin.) at Tc =25°C 10M Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating juncti.