STH90N55F4-2 - STMicroelectronics

STH90N55F4-2 N-channel Power MOSFET

bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance. 2 3 3 1 H²PAK Figure 1. Internal schematic diagram $ ' Obsolete Pro 3 !-V Table 1. Device summary Orde.

Features

Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008 Ω t(s)
■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on) uc
■ 100% avalanche tested 90 A rodApplications te P
■ Switching applications oleDescription bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance. 2 3 3 1 H²PAK Figure 1. Internal schematic diagram $ ' Obsolete Pro 3 !-V Table 1. Device summary Order code Markin.