STH6NA80FI - ST Microelectronics

STH6NA80FI N-CHANNEL MOS TRANSISTOR

® STW6NA80 STH6NA80FI N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE STW 6NA80 STH6NA80FI s s s s s s s V DSS 800 V 800 V R DS(on) < 2.2 Ω < 2.2 Ω ID 5.4 A 3.4 A TYPICAL RDS(on) = 1.8 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPL.

Features

pation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Un it STH6NA80F I 800 800 ± 30 V V V 3.4 2.1 22 60 0.48 4000 A A A W W /o C V o o 5.4 3.4 22 150 1.2  -65 to 150 150 C C (
•) Pulse width limited by safe operating area October 1998 1/10 STW6NA80-STH6NA80FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOW AT T218 2.08 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For .