STH6N100 - ST Microelectronics

STH6N100 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STH6N100 STH6N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH6N100 STH6N100FI s s s s s s s V DSS 1000 V 1000 V R DS( on) < 2Ω < 2Ω ID 6A 3.7 A TYPICAL RDS(on) = 1.75 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3.

Features

ge Temperature Max. Operating Junction Temperature o o Value STH6N100 1000 1000 ± 20 6 3.7 24 180 1.44  -65 to 150 150 3.7 2.3 24 70 0.56 4000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area December 1996 1/10 STH6N100/FI THERMAL DATA TO-218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 0.69 30 0.1 300 ISOWATT218 1.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter .