These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150 DS5052 - Rev 12 - May 2020 For further information contact y.
Order codes
VDS
RDS(on) max.
ID
PTOT
STFW3N150
63 W
STH3N150-2
1500 V
9Ω
STP3N150
2.5 A
140 W
STW3N150
• 100% avalanche tested
• Intrinsic capacitances and Qg minimized
• High speed switching
• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Applications
• Switching applications
S(3) (TO-3PF, TO-220 and TO-247)
S(2, 3) (H2PAK-2)
AM15557v1
Description
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH300NH02L-6 |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
2 | STH30N65DM6-7AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
3 | STH310N10F7-2 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
4 | STH310N10F7-6 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
5 | STH315N10F7-2 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STH315N10F7-6 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STH320N4F6-2 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STH320N4F6-6 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STH33N20 |
STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
10 | STH33N20FI |
STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
11 | STH360N4F6-2 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STH36N60DM6-7AG |
STMicroelectronics |
N-channel Power MOSFET |