These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Table 1. Device summary Order codes STH320N4F6-2 STH320N4F6-6 Marking 320N4F6 S.
STH320N4F6-2, STH320N4F6-6
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET
Datasheet — production data
Order codes STH320N4F6-2 STH320N4F6-6
VDS RDS(on) max
40 V
1.3 mΩ
1. Current limited by package.
■ Standard threshold drive
■ 100% avalanche tested
ID(1) 200 A
Applications
■ Automotive switching applications
TAB
TAB
2 3
1
H2PAK-2
1
H2PAK-6
7
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH320N4F6-6 |
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2 | STH300NH02L-6 |
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3 | STH30N65DM6-7AG |
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4 | STH310N10F7-2 |
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5 | STH310N10F7-6 |
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6 | STH315N10F7-2 |
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7 | STH315N10F7-6 |
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