This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Order code STH300NH02L-6 Table 1. Device summary Marking Package 300NH02L 2 H PAK-6 Packaging Tape and reel July 2013 .
TAB
1 H2PAK-6
7
Order code STH300NH02L-6
VDSS 24 V
RDS(on) max. ID (1) < 1.2 mΩ 180 A
1. Current limited by package.
• Designed for automotive applications and AEC-Q101 qualified
• Conduction losses reduced
• Low profile, very low parasitic inductance, high
current package
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH30N65DM6-7AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
2 | STH310N10F7-2 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
3 | STH310N10F7-6 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
4 | STH315N10F7-2 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STH315N10F7-6 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STH320N4F6-2 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STH320N4F6-6 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STH33N20 |
STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
9 | STH33N20FI |
STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
10 | STH360N4F6-2 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STH36N60DM6-7AG |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STH3N150-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |