STH360N4F6-2 - STMicroelectronics

STH360N4F6-2 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram $4!" ' Table 1. Device summary Order code STH360N4F6-2 Marking 360N4F6 3 !-.

Features

N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1) 1. Current limited by package
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness Applications
■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram.