STGWA30H65FB - STMicroelectronics

STGWA30H65FB IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tigh.

Features

 Maximum junction temperature: TJ = 175 °C
 High-speed switching series
 Minimized tail current
 VCE(sat) = 1.55 V(typ) @ IC = 30 A
 Safe paralleling
 Tight parameter distribution
 Low thermal resistance Applications
 Photovoltaic inverters
 High-frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positi.