This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and ver.
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V @ IC = 15 A
• 5 μs minimum short circuit withstand time at TJ = 150 °C
• Safe paralleling
• Low thermal resistance
• Very fast recovery antiparallel diode
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise be.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGWA15M120DF3 |
STMicroelectronics |
Trench gate field-stop IGBT | |
2 | STGWA100H65DFB2 |
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IGBT | |
3 | STGWA19NC60HD |
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IGBT | |
4 | STGWA20HP65FB2 |
STMicroelectronics |
IGBT | |
5 | STGWA25H120DF2 |
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Trench gate field-stop IGBT | |
6 | STGWA25H120F2 |
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Trench gate field-stop IGBT | |
7 | STGWA25IH135DF2 |
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IGBT | |
8 | STGWA30H60DFB |
STMicroelectronics |
30A high speed HB series IGBT | |
9 | STGWA30H65DFB2 |
STMicroelectronics |
IGBT | |
10 | STGWA30H65FB |
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IGBT | |
11 | STGWA30M65DF2 |
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Trench gate field-stop IGBT | |
12 | STGWA30N120KD |
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short circuit rugged IGBT |