This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient an.
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 15 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
• Industrial drives
• UPS
• Solar
• Welding
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGWA15H120DF2 |
STMicroelectronics |
IGBT | |
2 | STGWA100H65DFB2 |
STMicroelectronics |
IGBT | |
3 | STGWA19NC60HD |
STMicroelectronics |
IGBT | |
4 | STGWA20HP65FB2 |
STMicroelectronics |
IGBT | |
5 | STGWA25H120DF2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
6 | STGWA25H120F2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
7 | STGWA25IH135DF2 |
STMicroelectronics |
IGBT | |
8 | STGWA30H60DFB |
STMicroelectronics |
30A high speed HB series IGBT | |
9 | STGWA30H65DFB2 |
STMicroelectronics |
IGBT | |
10 | STGWA30H65FB |
STMicroelectronics |
IGBT | |
11 | STGWA30M65DF2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
12 | STGWA30N120KD |
STMicroelectronics |
short circuit rugged IGBT |