The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparalle.
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
NG1E3C2T
Applications
• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at l.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGWA15H120DF2 |
STMicroelectronics |
IGBT | |
2 | STGWA15M120DF3 |
STMicroelectronics |
Trench gate field-stop IGBT | |
3 | STGWA19NC60HD |
STMicroelectronics |
IGBT | |
4 | STGWA20HP65FB2 |
STMicroelectronics |
IGBT | |
5 | STGWA25H120DF2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
6 | STGWA25H120F2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
7 | STGWA25IH135DF2 |
STMicroelectronics |
IGBT | |
8 | STGWA30H60DFB |
STMicroelectronics |
30A high speed HB series IGBT | |
9 | STGWA30H65DFB2 |
STMicroelectronics |
IGBT | |
10 | STGWA30H65FB |
STMicroelectronics |
IGBT | |
11 | STGWA30M65DF2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
12 | STGWA30N120KD |
STMicroelectronics |
short circuit rugged IGBT |