STGP3NB60HD - ST Microelectronics

STGP3NB60HD N-CHANNEL IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s S.

Features

(VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 oC Collector Current (continuous) at Tc = 100 oC Collector Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Storage T emperature Max. O perating Junct ion T emperature 600 ± 20 6 3 24 70 0.56 -65 to 150 150 Value STG P7NB60HD STGP7NB60HDF P 600 ± 20 6 3 24 35 0.28 V V A A A W W /o C o o Unit C C (
•) Pulse width limited by max. junction temperature June 1999 1/9 STGP3NB60HD/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient.