STGF19NC60KD - STMicroelectronics

STGF19NC60KD 20 A - 600 V - short circuit rugged IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet − production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB19NC60KDT4 GB19NC60KD STGF19NC60KD STGP19NC60KD GF19NC.

Features

■ Low on-voltage drop (VCE(sat))
■ Low Cres / Cies ratio (no cross conduction susceptibility)
■ Short circuit withstand time 10 µs
■ IGBT co-packaged with Ultrafast free-wheeling diode Applications
■ High frequency inverters
■ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet − production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB19NC60KDT4 GB19NC60KD STGF19NC60KD STGP19N.