STGF10NB60SD - ST Microelectronics

STGF10NB60SD IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CO.

Features

ector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 20 10 80 25 0.2 2500
  –65 to 150 150 Unit V V V A A A W W/°C V °C °C (q ) Pulse width limited by safe operating area June 2003 1/8 STGF10NB60SD THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 5 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) VBR(CES) ICES IGES Parameter Collect.