STGF10HF60KD - ST Microelectronics

STGF10HF60KD Short-circuit Rugged IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Marking GB10HF60KD GD10HF60KD GF10HF60KD GP10HF60KD Package D2PAK DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Tube Order codes STGB10HF60KDT4 STGD10HF60KDT4 STGF10HF60KD STGP10HF.

Features

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■ Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultrafast soft-recovery antiparallel diode Short-circuit rugged 3 1 3 1 2 1 3 2 TO-220FP TAB TAB TO-220 Applications
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■ 3 1 DPAK Motor drives High frequency inverters SMPS and PFC in both hard switch and resonant topologies Figure 1. D2PAK Internal schematic diagram Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-sta.