STGF10H60DF - STMicroelectronics

STGF10H60DF IGBT

E(3) NG1E3C2T These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) tem.

Features

• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode Applications
• Motor control
• UPS
• PFC Description E(3) NG1E3C2T These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient.