STGF15M65DF2 - STMicroelectronics

STGF15M65DF2 Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient a.

Features

 6 µs of short-circuit withstand time
 VCE(sat) = 1.55 V (typ.) @ IC = 15 A
 Tight parameter distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode Applications
 Motor control
 UPS
 PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperatu.