STGD7NB60M - ST Microelectronics

STGD7NB60M N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "M" identifies a family optimized to achieve very low switching switching times for high frequency applications (<20KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATION.

Features

TAPE & REEL June 2003 1/11 STGP7NB60M - STGD7NB60M ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter TO-220 Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature 80 0.64
  – 55 to 150 150 600 ±20 14 7 56 70 0.56 Value DPAK V V A A A W W/°C °C °C Unit ( ) Pulse width limited by safe operating area THERMAL DATA TO-220 Rthj-case Rthj-amb Thermal R.