Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s INRUSH CURRENT LIMITAT.
ollector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature
o o o
Value 1200 20 ± 20 10 7 20 55 0.4 -65 to 150 150
Un it V V V A A A W W /o C
o o
C C
(
•) Pulse width limited by safe operating area
April 2000
1/6
STGD7NB120S-1
THERMAL DATA
R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 2.27 100 1.5
o o
C/W C/W o C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
Symbo l V BR(CES) V BR(ECR) I CES .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGD7NB60F |
ST Microelectronics |
N-CHANNEL IGBT | |
2 | STGD7NB60H |
ST Microelectronics |
N-CHANNEL IGBT | |
3 | STGD7NB60H-1 |
ST Microelectronics |
N-CHANNEL IGBT | |
4 | STGD7NB60K |
ST Microelectronics |
N-CHANNEL IGBT | |
5 | STGD7NB60M |
ST Microelectronics |
N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH IGBT | |
6 | STGD7NB60S |
ST Microelectronics |
N-CHANNEL IGBT | |
7 | STGD7NC60H |
STMicroelectronics |
N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT | |
8 | STGD10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT | |
9 | STGD10NC60H |
STMicroelectronics |
N-channel IGBT | |
10 | STGD10NC60HD |
STMicroelectronics |
very fast IGBT | |
11 | STGD10NC60K |
ST Microelectronics |
N-CHANNEL IGBT | |
12 | STGD10NC60KD |
STMicroelectronics |
600V short-circuit rugged IGBT |