The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performan.
TYPE STE48NM50 s s s s Figure 1: Package RDS(on) < 0.1Ω ID 48 A VDSS (@Tjmax) 550V s s TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS ISOTOP DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STE48NM60 |
ST Microelectronics |
N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET | |
2 | STE400-100T4MI |
Vishay |
Wet Tantalum Capacitors | |
3 | STE4000-25T4MI |
Vishay |
Wet Tantalum Capacitors | |
4 | STE400P |
ST Microelectronics |
10/100 Fast Ethernet 4 Port Transceiver | |
5 | STE40NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
6 | STE40NC60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
7 | STE40NK90ZD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STE45N50 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
9 | STE45NK80ZD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STE470-50T2MI |
Vishay |
Wet Tantalum Capacitors | |
11 | STE470-75T3MI |
Vishay |
Wet Tantalum Capacitors | |
12 | STE4700-10T3MI |
Vishay |
Wet Tantalum Capacitors |